Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

ABSTRACT

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

BACKGROUND 1. Technical Field

The present disclosure relates to a photoelectric conversion elementincluding a first electrode, second electrodes, a photoelectricconversion film, and a conductive layer and a method for manufacturingthe photoelectric conversion element.

2. Description of the Related Art

Known imaging devices include a semiconductor substrate and aphotoelectric conversion section placed on or above the semiconductorsubstrate. Such a configuration is called a stack-type configuration.For example, Japanese Unexamined Patent Application Publication Nos.2006-032714, 2011-228648, 2015-056554, and 2003-234460 disclose animaging device including a semiconductor substrate and a photoelectricconversion film placed on or above the semiconductor substrate.

In the stack-type configuration, a semiconductor substrate supporting aphotoelectric conversion section is provided with a charge-coupleddevice (CCD) circuit or complementary metal oxide semiconductor (CMOS)circuit for reading out signals. According to the stack-typeconfiguration, a section performing photoelectric conversion is locatedon or above the semiconductor substrate and therefore a high apertureratio is readily obtained. Furthermore, an advantage in being sensitivein the near-infrared region, in which Si exhibits no absorption, isobtained.

An organic material is typically used as material for forming aphotoelectric conversion film. Japanese Unexamined Patent ApplicationPublication No. 2006-032714 discloses a method for patterning an organicmaterial layer that is a photoelectric conversion film by dry etching.Japanese Unexamined Patent Application Publication Nos. 2011-228648 and2015-056554 propose the suppression of a white defect by reducing thestress applied to an organic photoelectric conversion film. The term“white defect” as used herein refers to a phenomenon in which a brightportion like a white flaw is caused in an image because a photoelectricconversion film is damaged by a factor such as the local concentrationof stress and a dark current is generated in a damaged portion.

SUMMARY

In one general aspect, the techniques disclosed here feature a methodfor manufacturing a photoelectric conversion element. The methodincludes providing a base structure including a semiconductor substratehaving a principal surface, a first electrode located on or above theprincipal surface, second electrodes which are located on or above theprincipal surface and which are one- or two-dimensionally arranged, anda photoelectric conversion film covering at least the second electrodes;forming a mask layer on the photoelectric conversion film, the masklayer being conductive and including a covering section covering aportion of the photoelectric conversion film that overlaps the secondelectrodes in plan view; and partially removing the photoelectricconversion film by immersing the base structure and the mask layer in anetchant.

It should be noted that general or specific embodiments may beimplemented as a system, a method, an integrated circuit, a computerprogram, a storage medium, or any selective combination thereof.

Additional benefits and advantages of the disclosed embodiments willbecome apparent from the specification and drawings. The benefits and/oradvantages may be individually obtained by the various embodiments andfeatures of the specification and drawings, which need not all beprovided in order to obtain one or more of such benefits and/oradvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of an exemplary photoelectricconversion element obtained by a manufacturing method according to anembodiment of the present disclosure;

FIG. 2 is a schematic plan view of the photoelectric conversion elementshown in FIG. 1 when viewed from the principal surface side of asemiconductor substrate;

FIG. 3 is a diagram showing the exemplary circuit configuration of apixel shown in FIG. 2;

FIG. 4 is a schematic sectional view showing the exemplary devicestructure of the pixel shown in FIG. 2;

FIG. 5 is a schematic sectional view of another exemplary photoelectricconversion element obtained by a manufacturing method according to anembodiment of the present disclosure;

FIG. 6 is a flowchart showing the outline of a method for manufacturinga photoelectric conversion element according to an exemplary embodimentof the present disclosure;

FIG. 7 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 8 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 9 is a schematic sectional view showing an example of theconfiguration of a photoelectric conversion film;

FIG. 10 is an energy diagram for the photoelectric conversion filmexemplified in FIG. 9;

FIG. 11 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 12 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 13 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 14 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 15A is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 15B is an enlarged schematic sectional view of a side end portionof a photoelectric conversion film after a step of partially removingthe photoelectric conversion film by wet etching;

FIG. 15C is an enlarged schematic sectional view of a side end portionof a photoelectric conversion film after a step of partially removingthe photoelectric conversion film by wet etching;

FIG. 16A is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anexemplary embodiment of the present disclosure;

FIG. 16B is an enlarged schematic sectional view of a side end portionof a photoelectric conversion structure after forming a counterelectrode;

FIG. 17 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anotherexemplary embodiment of the present disclosure;

FIG. 18 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anotherexemplary embodiment of the present disclosure;

FIG. 19 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anotherexemplary embodiment of the present disclosure;

FIG. 20 is a schematic sectional view illustrating a method formanufacturing a photoelectric conversion element according to anotherexemplary embodiment of the present disclosure;

FIG. 21 is a schematic sectional view showing the configuration of astack prepared in Comparative Example 1; and

FIG. 22 is a schematic sectional view showing the configuration of anetched stack.

DETAILED DESCRIPTION

An aspect of the present disclosure is as summarized below.

Item 1

A method for manufacturing a photoelectric conversion element accordingto Item 1 of the present disclosure includes

providing a base structure including a semiconductor substrate having aprincipal surface, a first electrode located on or above the principalsurface, second electrodes which are located on or above the principalsurface and which are one- or two-dimensionally arranged, and aphotoelectric conversion film covering at least the second electrodes;

forming a mask layer on the photoelectric conversion film, the masklayer being conductive and including a covering section covering aportion of the photoelectric conversion film that overlaps the secondelectrodes in plan view; and

partially removing the photoelectric conversion film by immersing thebase structure and the mask layer in an etchant.

According to a configuration specified in Item 1, since thephotoelectric conversion film is partially removed by wet etching, thestress in the photoelectric conversion film is reduced and the effect ofsuppressing the occurrence of a white defect is obtained. Furthermore,since the mask layer, which is conductive, is used for wet etching, aportion of the mask layer that remains after etching can be used as, forexample, a charge-blocking layer or a light-transmissive electrode.

Item 2

In the method for manufacturing the photoelectric conversion elementaccording to Item 1,

the mask layer may be made of an organic material, and

an etching rate of the mask layer during partially removing thephotoelectric conversion film may be lower than an etching rate of thephotoelectric conversion film during partially removing thephotoelectric conversion film.

According to a configuration specified in Item 2, the photoelectricconversion film can be preferentially dissolved during wet etching andtherefore the mask layer can be left on the photoelectric conversionfilm after wet etching, whereas the organic material is used to form themask layer.

Item 3

In the method for manufacturing the photoelectric conversion elementaccording to Item 2,

the organic material may be a photoelectric conversion material.

According to a configuration specified in Item 3, a portion of thecovering section that remains after etching, the covering section beinga portion of the mask layer, can be used as a portion of a photoelectricconversion structure, for example, a charge-blocking layer.

Item 4

In the method for manufacturing the photoelectric conversion elementaccording to Item 1,

the mask layer may be made of an oxide semiconductor material.

According to a configuration specified in Item 4, a portion of thecovering section that remains after etching, the covering section beinga portion of the mask layer, can be used as a portion of a photoelectricconversion structure, for example, a charge-blocking layer and thefollowing advantage is obtained: an advantage that the photoelectricconversion efficiency is increased by applying a higher voltage to anorganic photoelectric conversion film.

Item 5

The method for manufacturing the photoelectric conversion elementaccording to any one of Items 2 to 4 may further include

forming a light-transmissive third electrode which covers the coveringsection and which electrically connects the covering section to thefirst electrode after partially removing the photoelectric conversionfilm.

According to a configuration specified in Item 5, the covering sectioncan be used as a light-transmissive counter electrode.

Item 6

In the method for manufacturing the photoelectric conversion elementaccording to Item 1,

the mask layer may be made of a transparent conductive material.

According to a configuration specified in Item 6, the covering section,which is a portion of the mask layer, can be used as alight-transmissive electrode.

Item 7

The method for manufacturing the photoelectric conversion elementaccording to Item 6 may further include

forming a third electrode electrically connecting the covering sectionto the first electrode after partially removing the photoelectricconversion film.

According to a configuration specified in Item 7, a counter electrodecan be formed so as to include a portion of the covering section.

Item 8

In the method for manufacturing the photoelectric conversion elementaccording to any one of Items 1 to 7,

the base structure may include a readout circuit electrically connectedto the second electrodes.

Item 9

In the method for manufacturing the photoelectric conversion elementaccording to any one of Items 1 to 8,

the step of providing the base structure may include

-   -   forming the second electrodes on or above the principal surface        and    -   forming the photoelectric conversion film on or above the        principal surface after forming the second electrodes.

Item 10

A photoelectric conversion element according to Item 10 of the presentdisclosure includes

a semiconductor substrate having a principal surface,

a first electrode located on or above the principal surface,

second electrodes which are located on or above the principal surfaceand which are one- or two-dimensionally arranged,

a photoelectric conversion film covering at least the second electrodes,and a conductive layer covering a portion of the photoelectricconversion film, the portion overlapping the second electrodes in planview.

In a cross section perpendicular to the principal surface, theconductive layer extends outside a side end portion of the photoelectricconversion film.

Item 11

In the photoelectric conversion element according to Item 10,

in the cross section, the photoelectric conversion film may have atapered side surface.

Item 12

In the photoelectric conversion element according to Item 10,

the conductive layer may be made of an organic material.

Item 13

In the photoelectric conversion element according to Item 12,

the organic material may be a photoelectric conversion material.

Item 14

In the photoelectric conversion element according to Item 10,

the conductive layer may be made of an oxide semiconductor material.

Item 15

The photoelectric conversion element according to any one of Items 12 to14 may further include

a light-transmissive third electrode which covers the covering sectionand which electrically connects the covering section to the firstelectrode.

Item 16

In the photoelectric conversion element according to Item 10,

the conductive layer may be made of a transparent conductive material.

Item 17

The photoelectric conversion element according to Item 16 may furtherinclude

a third electrode electrically connecting the covering section to thefirst electrode.

Item 18

In the photoelectric conversion element according to any one of Items 10to 17,

the semiconductor substrate may include at least a part of a readoutcircuit electrically connected to the second electrodes.

Embodiments of the present disclosure are described below in detail withreference to the accompanying drawings. Each of the embodimentsdescribed below illustrates a general or specific example. Numericalvalues, shapes, materials, structural components, the arrangement andconnection of the structural components, steps, the order of the steps,and the like described above in the embodiments are merely examples andare not intended to limit the present disclosure. Various aspectsdescribed herein can be combined with each other unless a contradictionarises. Among the structural components in the embodiments, structuralcomponents that are not recited in an independent claim indicating thehighest concept are described as arbitrary structural components. Indescriptions below, structural components having substantially the samefunction are represented by common reference numerals and are notdescribed in detail in some cases.

FIG. 1 schematically shows a cross section of an exemplary photoelectricconversion element 100A obtained by a manufacturing method according toan embodiment of the present disclosure. As shown in FIG. 1, thephotoelectric conversion element 100A roughly includes a semiconductorsubstrate 190 having a principal surface 190 a, a first electrode 110placed on the principal surface 190 a side of the semiconductorsubstrate 190, a plurality of second electrodes 120 placed on theprincipal surface 190 a side of the semiconductor substrate 190, aphotoelectric conversion structure 130A covering the second electrodes120, and a counter electrode 140 which is light-transmissive and whichcovers at least the upper surface 130 a of the photoelectric conversionstructure 130A. The counter electrode 140 is formed from a transparentconductive material typified by indium tin oxide (ITO) and the like.Incidentally, the terms “light-transmissive” and “transparent” as usedherein mean that the photoelectric conversion structure 130A transmitsat least one portion of light with an absorbable wavelength and does notnecessarily mean that the photoelectric conversion structure 130Atransmits light in the visible wavelength range. The terms “on orabove”, “upper surface”, and “lower surface” as used herein are used toindicate the relative arrangement of members and are not intended tolimit the attitude of a photoelectric conversion element according tothe present disclosure.

In FIG. 1, the semiconductor substrate 190, which supports thephotoelectric conversion structure 130A, is provided with a drivingcircuit, which is not shown, for driving the photoelectric conversionelement 100A and readout circuits, which are not shown, for reading outa signal depending on the illuminance. The semiconductor substrate 190is not limited to a substrate entirely made of a semiconductor and maybe an insulating substrate provided with a semiconductor layer placed ona surface on the side that the second electrodes 120 are arranged.

As schematically shown in FIG. 1, the counter electrode 140 extends onor above the first electrode 110 and is connected to the first electrode110. That is, the counter electrode 140 is configured such that apredetermined voltage can be applied to the counter electrode 140through the first electrode 110 during the operation of thephotoelectric conversion element 100A.

The second electrodes 120 are one- or two-dimensionally arranged on orabove the principal surface 190 a as described below. Each of the secondelectrodes 120 is connected to a corresponding one of the readoutcircuits. In an example shown in FIG. 1, the photoelectric conversionelement 100A has a configuration similar to that of a stack-type ofimaging device and can be used as a digital camera, a light sensor, orthe like.

In this example, the photoelectric conversion structure 130A includes aphotoelectric conversion layer 132 covering the second electrodes 120and an organic layer 134 placed on the photoelectric conversion layer132. The organic layer 134 may be, for example, a charge-blocking layersuch as a hole-blocking layer or an electron-blocking layer. The organiclayer 134 may have a photoelectric conversion function.

In a configuration exemplified in FIG. 1, the photoelectric conversionelement 100A further includes a protective layer 150 and an interlayerinsulating layer 160. The protective layer 150 is formed from alight-transmissive insulating material and covers the counter electrode140. The interlayer insulating layer 160 is located between theprincipal surface 190 a and the photoelectric conversion structure 130A.As schematically shown in FIG. 1, the interlayer insulating layer 160electrically separates the two adjacent second electrodes 120 from eachother. Furthermore, the interlayer insulating layer 160 electricallyseparates the first electrode 110 from the second electrodes 120.

FIG. 2 is a schematic plan view of the photoelectric conversion element100A when viewed from the principal surface 190 a side of thesemiconductor substrate 190. For convenience of description, FIG. 2shows a structure excluding the photoelectric conversion structure 130A,the counter electrode 140, and the protective layer 150 from theconfiguration described with reference to FIG. 1.

As schematically shown in FIG. 2, the photoelectric conversion element100A includes an imaging region 500 including a plurality of pixels 10.The imaging region 500 may referred to as a region having a repeatingstructure of the pixels 10, which are units each including acorresponding one of the second electrodes 120 and a corresponding oneof the readout circuits, which are connected to the second electrodes120. In this example, the second electrodes 120 are arranged in aplurality of rows and columns on the principal surface 190 a side of thesemiconductor substrate 190; hence, the imaging region 500, which isrectangular, is placed on the principal surface 190 a side of thesemiconductor substrate semiconductor substrate 190. The arrangement ofthe second electrodes 120 is not limited to such a matrix as exemplifiedin FIG. 2. For example, the second electrodes 120 may beone-dimensionally arranged such that the photoelectric conversionelement 100A is used as a line sensor. The number of the secondelectrodes 120 is arbitrary.

The first electrode 110 is located in a peripheral region 510 outsidethe imaging region 500 and is connected to a voltage supply circuit,which is not shown, through a circuit or wiring line formed on thesemiconductor substrate semiconductor substrate 190. A predeterminedvoltage is applied to the first electrode 110 during the operation ofthe photoelectric conversion element 100A.

As schematically shown in FIG. 2, the photoelectric conversion element100A includes a plurality of row signal lines R₀, R₁, . . . , R_(i), . .. , R_(m-1) placed for each row of the pixels 10 and output signal linesS₀, S₁, . . . , S_(j), . . . , S_(n-1) placed for each column of thepixels 10, where m is an integer of 0 or more and n is an integer of 0or more. One or more of the pixels 10 belonging to each row areelectrically connected to a corresponding one of the row signal lines.One or more of the pixels 10 belonging to each column are electricallyconnected to a corresponding one of the output signal lines.

The row signal lines R₀, R₁, . . . , R_(i), . . . , R_(m-1) are, forexample, address signal lines. The row signal lines R₀, R₁, . . . ,R_(i), . . . , R_(m-1) extend to a row driver region 520 provided withtransistors making up a row-scanning circuit and the like and areconnected to, for example, the row-scanning circuit. The output signallines S₀, S₁, . . . , S_(j), . . . , S_(n-1) extend to a column driverregion 530 provided with transistors making up a column-scanning circuitand the like. The output signal lines S₀, S₁, . . . , S_(j), . . . ,S_(n-1) can be connected to the column-scanning circuit. Thecolumn-scanning circuit executes noise suppression signal processingtypified by correlated double sampling, analogue-digital conversion, orthe like for output signals read out from the pixels 10.

FIG. 3 shows the exemplary circuit configuration of each pixel 10. Forthe sake of ease, one of the pixels 10 that is located at the ith rowand the jth column is shown herein.

The pixel 10 shown in FIG. 3 includes a photoelectric conversion section540 including one of the second electrodes 120, the counter electrode140, and the photoelectric conversion structure 130A and a readoutcircuit 550 connected to the second electrode 120. The counter electrode140 is connected to a wiring line 142 through the first electrode 110,which is not shown in FIG. 3, and is supplied with a predeterminedvoltage from a voltage supply circuit, which is not shown, duringoperation. The potential of the counter electrode 140 is adjusted, forexample, above the potential of the second electrode 120, whichfunctions as a pixel electrode, in such a manner that a predeterminedvoltage is applied to the counter electrode 140 through the wiring line142, thereby enabling, among charges generated in the photoelectricconversion structure 130A by the incidence of light, positive charges tobe collected as signal charges by the second electrode 120.

In the configuration shown in FIG. 3, the readout circuit 550 includes asignal detection transistor 32 and an address transistor 34. The signaldetection transistor 32 and the address transistor 34 are typicallyfield-effect transistors formed on the semiconductor substrate 190.Examples in which an n-channel MOSFET is used as a transistor aredescribed below.

The gate of the signal detection transistor 32 is connected to thesecond electrode 120 and the drain thereof is connected to a power line22 functioning as a source follower power supply. A node 44 between thephotoelectric conversion section 540 and the gate of the signaldetection transistor 32 forms at least one portion of a charge storageregion storing signal charges generated in the photoelectric conversionsection 540. The address transistor 34 is connected between the signaldetection transistor 32 and the output signal line S_(j). Turning on theaddress transistor 34 allows a voltage signal depending on theilluminance is read out in the output signal line S_(j).

In an example shown in FIG. 3, the readout circuit 550 includes a firstreset transistor 36, a second reset transistor 38, a first capacitor 41,and a second capacitor 42. Furthermore, in this example, thephotoelectric conversion element 100A includes an inverting amplifier 24placed for each column of the pixels 10. The inverting amplifier 24includes an inverting input terminal connected to the output signal lineS_(j). A predetermined reference voltage Vref is applied to theinverting input terminal during operation. As shown in FIG. 3, the firstreset transistor 36 ad the second reset transistor 38 are connected inseries between the second electrode 120 and a feedback line 25 connectedto an output terminal of the inverting amplifier 24.

The first capacitor 41 is connected in parallel to the first resettransistor 36. One of the source and drain of the first reset transistor36 is connected to the second electrode 120. The second capacitor 42includes an electrode connected to a node 46 between the first resettransistor 36 and the second reset transistor 38. The second capacitor42 includes another electrode connected to a storage control line 52. Apredetermined voltage is applied to the other electrode of the secondcapacitor 42 during operation. The second capacitor 42 typically has acapacitance greater than that of the first capacitor 41.

Controlling the potential of a first reset control line 26 connected tothe gate of the first reset transistor 36 and the potential of a secondreset control line 28 connected to the gate of the second resettransistor 38 enables a feedback loop electrically feeding back some orall of output signals from the signal detection transistor 32 to beformed. Forming the feedback loop enables the influence of the kTC noisecaused by turning off the first reset transistor 36 and the second resettransistor 38 to be reduced. Details of such noise canceling usingfeedback are described in Japanese Unexamined Patent ApplicationPublication No. 2017-046333. According to a circuit configurationexemplified in FIG. 3, the first reset transistor 36 can function as atransistor for gain switching. Details of such mode switching are alsodescribed in Japanese Unexamined Patent Application Publication No.2017-046333.

FIG. 4 schematically shows the exemplary device structure of each pixel10. The semiconductor substrate 190 includes impurity regions 191, 192,193, 194, and 195 and an isolation region 196 electrically isolating thereadout circuits 550, each of which is placed in a corresponding one ofthe pixels 10, between the pixels 10. The impurity regions 191, 192,193, 194, and 195 are typically n-type diffusion regions. In FIG. 4, inorder to avoid the complication of FIG. 4, the signal detectiontransistor 32, the address transistor 34, and the first reset transistor36 are shown on behalf of components making up the readout circuit 550.

The signal detection transistor 32 includes the impurity regions 193 and194, which are among the impurity regions 191, 192, 193, 194, and 195,and a gate electrode 32 e placed above the semiconductor substrate 190with a gate insulating layer therebetween. The address transistor 34includes a gate insulating layer placed on the semiconductor substrate190, a gate electrode, and the impurity regions 194 and 195. In thisexample, the address transistor 34 shares the impurity region 194 withthe signal detection transistor 32.

The first reset transistor 36 includes the impurity regions 191 and 192,a gate insulating layer placed on the semiconductor substrate 190, and agate electrode. As schematically shown in FIG. 4, the isolation region196 is placed between the first reset transistor 36 and the signaldetection transistor 32.

The interlayer insulating layer 160 includes a plurality of insulatingsub-layers formed from, for example, silicon dioxide and covers thereadout circuit 550, which is placed on the semiconductor substrate 190.Each pixel 10 includes a conductive structure 170 which electricallyconnects the second electrode 120 to the readout circuit 550 and whichis placed in the interlayer insulating layer 160. As schematically shownin FIG. 4, the conductive structure 170 includes a via formed from metalsuch as copper, a plug formed from polysilicon, and the like andelectrically connects the second electrode 120, the impurity region 191,and the gate electrode 32 e of the signal detection transistor 32 toeach other.

The counter electrode 140 of the photoelectric conversion section 540 islocated on the side from which light from a subject comes. The counterelectrode 140 is typically placed in the form of a single continuouselectrode layer astride the pixels 10. The photoelectric conversionstructure 130A may also be placed in the form of a single continuousphotoelectric conversion structure astride the pixels 10. An opticalfilter 182 such as a color filter, a microlens 184, and the like may beplaced on a principal surface of the counter electrode 140 that isopposite to the photoelectric conversion structure 130A.

FIG. 5 schematically shows a cross section of another exemplaryphotoelectric conversion element 100B obtained by a manufacturing methodaccording to an embodiment of the present disclosure. A main differencebetween the photoelectric conversion element 1006 shown in FIG. 5 andthe photoelectric conversion element 100A described with reference toFIG. 1 is that the photoelectric conversion element 100B includes aphotoelectric conversion structure 1306 instead of the photoelectricconversion structure 130A.

As schematically shown in FIG. 5, the photoelectric conversion structure1306 includes a photoelectric conversion layer 132 covering a pluralityof second electrodes 120 and also includes an oxide semiconductor layer136 placed on the photoelectric conversion layer 132. The oxidesemiconductor layer 136, as well as the above-mentioned organic layer134, can function as, for example, a hole-blocking layer. The oxidesemiconductor layer 136 may have a photoelectric conversion function.The photoelectric conversion structure 1306 may include an oxidesemiconductor layer serving as, for example, an electron-blocking layer.Exemplary Method for Manufacturing Photoelectric Conversion Element

FIG. 6 is a flowchart showing the outline of a method for manufacturinga photoelectric conversion element according to an exemplary embodimentof the present disclosure. The method for manufacturing thephotoelectric conversion element exemplified in FIG. 6 roughly includesa step of preparing a base structure including a semiconductorsubstrate, a plurality of electrodes, and a photoelectric conversionfilm (Step S1 in FIG. 6); a step of forming a conductive mask layercovering a portion of the photoelectric conversion film on thephotoelectric conversion film (Step S2 in FIG. 6); and a step ofremoving a portion not covered by the mask layer from the photoelectricconversion film by immersing the base structure and the mask layer in anetchant (Step S3 in FIG. 6).

Step of Preparing Base Structure

First, the base structure is prepared so as to include the semiconductorsubstrate, the electrodes, and the photoelectric conversion film. Thesemiconductor substrate has a principal surface. The electrodes arelocated on or above the principal surface. The photoelectric conversionfilm covers at least the electrodes. The base structure may be preparedby purchase or may be prepared in such a manner that the electrodes andthe photoelectric conversion film are formed on one principal surfaceside of the semiconductor substrate in that order as described below.

Herein, first, an n-type silicon substrate serving as a supportsubstrate is prepared and a p-well layer is formed on a principalsurface of the n-type silicon substrate. Thereafter, signal detectiontransistors 32 and the like are formed on the principal surface sideprovided with the p-well layer, whereby readout circuits 550 are formed.This allows a semiconductor substrate 190 to be obtained. A knownsemiconductor process can be used to form the readout circuits 550. Asdescribed above, the semiconductor substrate 190 is not limited to asubstrate entirely made of a semiconductor. For example, a glasssubstrate, a quartz substrate, or the like can be used as a supportsubstrate. A substrate in and/or on which an electronic circuit can beprovided can be used as a support substrate. A p-type silicon substratemay be used instead of the n-type silicon substrate.

Next, as shown in FIG. 7, a plurality of second electrodes 120 servingas pixel electrodes are formed on the principal surface 190 a side ofthe semiconductor substrate 190. Herein, a first electrode 110 is alsoformed on the principal surface 190 a side thereof in a step of formingthe second electrodes 120.

Typically, an insulating layer is formed so as to cover the principalsurface 190 a provided with the readout circuits 550, followed byforming the first electrode 110 and the second electrodes 120 on theinsulating layer. As described with reference to FIG. 2, while thesecond electrodes 120 are placed in an imaging region 500, the firstelectrode 110 is placed in a peripheral region 510.

A physical vapor deposition (PVD) process and a chemical vapordeposition (CVD) process can be used to form the first electrode 110 andthe second electrodes 120. A wiring material generally used in the fieldof semiconductor integrated circuits can be used to form the firstelectrode 110 and the second electrodes 120. An example of material forforming the first electrode 110 and the second electrodes 120 is a noblemetal such as Ag, Pt, or Au or a transparent conductive material such asITO. Material for forming the first electrode 110 and material forforming the second electrodes 120 need not be common.

In the case of forming a finer electrode pattern, the first electrode110 and the second electrodes 120 may be formed in such a manner that,for example, after an electrode material is deposited, unnecessaryportions are removed by dry etching. Applying one of Al, Ti, Mo, Ta, andW; an alloy containing one or more of these metals; a conductivesilicide; a conductive nitride; or polycrystalline Si to the materialfor forming the first electrode 110 and the second electrodes 120enables high-precision patterning by dry etching.

After the first electrode 110 and the second electrodes 120 are formed,gaps between the two second electrodes 120 adjacent to each other andgaps between the first electrode 110 and the second electrodes 120 arefilled with an insulating material and a surface of the first electrode110, surfaces of the second electrodes 120, and a layer of theinsulating material are treated so as to be flush with each other. Thisenables an interlayer insulating layer 160 to be formed as schematicallyshown in FIG. 7. In FIG. 7, the first electrode 110 and the secondelectrodes 120 are illustrated as if the lower surface of the firstelectrode 110 and the lower surfaces of the second electrodes 120 are incontact with the principal surface 190 a. This merely schematicallyshows the arrangement of the first electrode 110 and the secondelectrodes 120. As described with reference to FIG. 4, the firstelectrode 110 and the second electrodes 120 can be electricallyconnected to the readout circuits 550 with conductive structures placedin the interlayer insulating layer 160. In particular, each of thesecond electrodes 120 is connected to the gate of a corresponding one ofthe signal detection transistors 32 with a plug or the like and isthereby electrically connected to a corresponding one of the readoutcircuits 550.

Next, a photoelectric conversion film 130 r covering at least the secondelectrodes 120 is formed. Herein, as shown in FIG. 8, the photoelectricconversion film 130 r is formed so as to entirely cover the principalsurface 190 a side of the semiconductor substrate 190. In an exampledescribed below, an organic material is used to form the photoelectricconversion film 130 r. The photoelectric conversion film 130 r typicallycontains an organic p-type semiconductor and an organic n-typesemiconductor. A dry deposition process and a wet deposition process canboth be used to form the photoelectric conversion film 130 r. The drydeposition process used may be, for example, a vacuum vapor depositionprocess. The wet deposition process used may be an ink jet process, aspraying process, a nozzle printing process, a spin coating process, adip coating process, a casting process, a die coating process, a rollcoating process, a bar coating process, a gravure coating process, orthe like. Forming the photoelectric conversion film 130 r allows a basestructure 200 including the photoelectric conversion film 130 r on theprincipal surface 190 a side to be obtained.

FIG. 9 schematically shows an example of the configuration of thephotoelectric conversion film 130 r. In this example, the photoelectricconversion film 130 r has a multilayer structure including a pluralityof layers formed from an organic material. The multilayer structure hasa configuration in which an electron-blocking film 14, a p-typesemiconductor film 13 p, a mixture film 13 x, an n-type semiconductorfilm 13 n, and a hole-blocking film 16 are stacked in that order fromthe second electrode 120 side. The p-type semiconductor film 13 p islocated between the mixture film 13 x and the electron-blocking film 14and functions as a hole transport layer. The n-type semiconductor film13 n is located between the mixture film 13 x and the hole-blocking film16 and functions as an electron transport layer. FIG. 9 shows an exampleof a configuration in which, among positive and negative chargesgenerated by photoelectric conversion, the positive charges arecollected by the second electrodes 120 and holes are used as signalcharges. In the case of a configuration in which, among the positive andnegative charges generated by photoelectric conversion, the negativecharges are collected by the second electrodes 120 and electrons areused as signal charges, the stacking order of the films included in thephotoelectric conversion film 130 r are reversed. That is, thehole-blocking film 16 and the n-type semiconductor film 13 n arearranged on the second electrode 120 side and the electron-blocking film14 and the p-type semiconductor film 13 p are arranged on the sideopposite to the second electrodes 120.

FIG. 10 is an energy diagram for the photoelectric conversion film 130r, which is exemplified in FIG. 9. In FIG. 10, the lower side of eachrectangle schematically expresses the level of the highest occupiedmolecular orbital (HOMO) of material for forming a layer. The upper sideof the rectangle schematically expresses the energy level of the lowestunoccupied molecular orbital (LUMO) of the material for forming thelayer. In FIG. 10, thick horizontal lines schematically express theexemplary Fermi levels of a counter electrode 140 and the secondelectrodes 120. Hereinafter, the level of the highest occupied molecularorbital is simply referred to as the HOMO level and the energy level ofthe lowest unoccupied molecular orbital is simply referred to as theLUMO level in some cases.

As shown in FIG. 10, in typical, the HOMO level of the electron-blockingfilm 14 is lower than the HOMO level of the p-type semiconductor film 13p and the LUMO level of the electron-blocking film 14 is higher than theLUMO level of the p-type semiconductor film 13 p. The electron-blockingfilm 14 is formed from, for example, an aromatic amine compound such as4,4′-bis[N-(naphthyl)-N-phenyl-amino]biphenyl (α-NPD) that is an organicp-type semiconductor, a stilbene derivative, a pyrazoline derivative, aporphin derivative, a phthalocyanine derivative, a triazole derivative,an oxazole derivative, an imidazole derivative, a phenylenediaminederivative, an arylamine derivative, a fluorene derivative, anamino-substituted chalcone derivative, a fluorenone derivative, ahydrazone derivative, a silazane derivative, or the like. Theelectron-blocking film 14 has the function of reducing the dark currentdue to the injection of electrons into the photoelectric conversion film130 r from the second electrodes 120.

The organic p-type semiconductor is mainly typified by ahole-transporting organic compound and refers to an organic compoundhaving the property of readily donating an electron. In particular, theorganic p-type semiconductor refers to an organic compound having lowerionization potential in the case of using two organic compounds incontact with each other. Thus, the organic p-type semiconductor used maybe any organic compound exhibiting electron-donating ability.

Examples of the organic p-type semiconductor include triarylaminecompounds; benzidine compounds; pyrazoline compounds; styrylaminecompounds; hydrazone compounds; triphenylmethane compounds; carbazolecompounds; polysilane compounds; thiophene compounds such asα-sexithiophene (α-6T) and P3HT; phthalocyanine compounds; cyaninecompounds; merocyanine compounds; oxonol compounds; polyamine compounds;indole compounds; pyrrole compounds; pyrazole compounds; polyarylenecompounds; condensed aromatic polycyclic compounds such as naphthalenederivatives, anthracene derivatives, phenanthrene derivatives, tetracenederivatives such as rubrene, pyrene derivatives, perylene derivatives,and fluoranthene derivatives; and metal complexes containing anitrogen-containing heterocyclic compound as a ligand. The organicp-type semiconductor used is not limited to these compounds and may bean organic compound having an ionization potential lower than that oforganic compounds used as organic n-type semiconductors.

The hole-blocking film 16 has the function of reducing the dark currentdue to the injection of holes into the photoelectric conversion film 130r from the counter electrode 140. For example, the organic n-typesemiconductor can be used to form the hole-blocking film 16. An oxidesemiconductor material can be used to form the hole-blocking film 16 asdescribed below.

As an organic material for forming the hole-blocking film 16, forexample, the following materials can be used: fullerene, fullerenederivatives, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylicdianhydride (PTCDA), acetylacetonate complexes, BCP, Alq, and the like.The hole-blocking film 16 is an example of the above-mentioned organiclayer 134. When the hole-blocking film 16 has higher transmittance inthe visible to near infrared range, a larger amount of light can reach amultilayer structure 13L including the p-type semiconductor film 13 p,the mixture film 13 x, and the n-type semiconductor film 13 n. Materialhaving no high absorption at a wavelength at which the multilayerstructure 13L exhibits absorption may be selected as material forforming the hole-blocking film 16. Alternatively, the thickness of thehole-blocking film 16 may be minimized. The thickness of thehole-blocking film 16 depends on the specific configuration of themultilayer structure 13L, the thickness of the counter electrode 140,and the like. The thickness of the hole-blocking film 16 may be withinthe range of 2 nm to 50 nm.

The organic n-type semiconductor is mainly typified by anelectron-transporting organic compound and refers to an organic compoundhaving the property of readily accepting an electron. In particular, theorganic n-type semiconductor refers to an organic compound having higherelectron affinity in the case of using two organic compounds in contactwith each other. Thus, the organic n-type semiconductor used may be anyorganic compound exhibiting electron-accepting ability.

Examples of the organic n-type semiconductor include fullerenes such asC₆₀ and C₇₀; fullerene derivatives such as [6,6]-phenyl-C₆₁-butyric acidmethyl ester (PCBM); condensed aromatic polycyclic compounds such asnaphthalene derivatives, anthracene derivatives, phenanthrenederivatives, tetracene derivatives, pyrene derivatives, perylenederivatives, and fluoranthene derivatives; nitrogen-, oxygen-, orsulfur-containing five- to seven-membered heterocyclic compounds such aspyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline,quinoxaline, quinazoline, phthalazine, cinnoline, isoquinoline,pteridine, acridine, phenazine, phenanthroline, tetrazole, pyrazole,imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole,benzoxazole, benzothiazole, carbazole, purine, triazolopyridazine,triazolopyrimidine, tetrazaindene, oxadiazole, imidazopyridine,pyrrolidine, pyrrolopyridine, thiadiazolopyridine, dibenzazepine, andtribenzazepine; subphthalocyanine (SubPc); polyarylene compounds;fluorenone compounds; cyclopentadiene compounds; silyl compounds;perylenetetracarboxyldiimide (PTCDI) compounds; and metal complexescontaining a nitrogen-containing heterocyclic compound as a ligand. Theorganic n-type semiconductor used is not limited to these compounds andmay be an organic compound having an electron affinity higher than thatof organic compounds used as organic p-type semiconductors.

When the electron-blocking film 14 is placed in the photoelectricconversion film 130 r, material for forming the second electrodes 120 isselected from, for example, the above-mentioned materials inconsideration of the bond strength between the counter electrode 140 andthe second electrodes 120, stability, the difference in ionizationpotential therebetween, the difference in electron affinitytherebetween, and the like. Likewise, material for forming the counterelectrode 140 can be selected from known materials in consideration ofthe bond strength between the counter electrode 140 and a layer adjacentthereto, stability, the difference in ionization potential therebetween,the difference in electron affinity therebetween, and the like. When nohole-blocking film 16 is placed and the work function of the counterelectrode 140 is relatively large, for example, about 4.8 eV, thepotential barrier between the counter electrode 140 and the multilayerstructure 13L is small and holes are likely to be injected into themultilayer structure 13L from the counter electrode 140. As a result,the dark current may possibly increase. However, in this embodiment, thehole-blocking film 16 is interposed between the counter electrode 140and the multilayer structure 13L and therefore the effect of suppressingthe dark current can be expected.

When the multilayer structure 13L is made of an organic semiconductormaterial, the photoelectric conversion film 130 r may include amultilayer structure of an electron-donating organic material and anelectron-accepting organic material, that is, a heterojunction.Alternatively, the photoelectric conversion film 130 r may include alayer having a bulk heterojunction structure. The photoelectricconversion film 130 r may have a combination of these.

Light incident on the photoelectric conversion film 130 r can beabsorbed by one or both of an electron-donating organic material and anelectron-accepting organic material. When the photoelectric conversionstructure 130A includes a bulk heterojunction structure layer, adisadvantage that the carrier diffusion length in the photoelectricconversion film 130 r is short can be compensated for and thephotoelectric conversion efficiency can be increased. The bulkheterojunction structure is described in detail in Japanese Patent No.5553727.

Step of Forming Conductive Mask Layer on Photoelectric Conversion Film

Next, the mask layer is formed on the photoelectric conversion film 130r. In an embodiment of the present disclosure, the photoelectricconversion structure 130A is formed so as to include a portion of thephotoelectric conversion film 130 r in such a manner that thephotoelectric conversion film 130 r is partially removed by wet etchingas described below. The mask layer functions as an etching maskprotecting a portion of the photoelectric conversion film 130 r that islocated on the imaging region 500.

In an embodiment of the present disclosure, the mask layer is formedfrom an organic material and/or a transparent conductive material so asto cover at least a portion of the photoelectric conversion film 130 rthat overlaps the second electrodes 120 in plan view. For example, thefollowing portion can be used as a mask layer: a remaining portion ofthe hole-blocking film 16 that is obtained by selectively removing aportion other than a portion located on the imaging region 500 from thehole-blocking film 16. That is, a mask layer 16C including a portion ofa covering section 560 can be formed by patterning the hole-blockingfilm 16 as shown in FIG. 11. The mask layer may be formed from one ormore of the organic material, the oxide semiconductor material, and thetransparent conductive material so as to cover at least the portion ofthe photoelectric conversion film 130 r that overlaps the secondelectrodes 120 as described below.

The hole-blocking film 16 can be patterned in such a manner that, afterthe hole-blocking film 16 is formed by, for example, a vacuum vapordeposition process or a coating process, a portion other than a portionlocated on, for example, the imaging region 500 is selectively removedfrom the hole-blocking film 16 by photolithography and etching. Apattern of an organic photoelectric conversion material may be directlyformed by an ink jet process, an offset printing process, a gravureprinting process, a flexographic printing process, or a screen printingprocess. Alternatively, a pattern of the organic photoelectricconversion material may be formed by a vacuum vapor deposition processusing a mask. From the viewpoint of the influence of a resist, adeveloper, or a remover, the vacuum vapor deposition process using themask is more advantageous than photolithography. Incidentally, it is notessential that the whole of a portion located on the peripheral region510 is removed from the hole-blocking film 16. The mask layer 16C mayinclude a portion located on the peripheral region 510 in addition tothe covering section 560.

As schematically shown in FIG. 11, the covering section 560 of the masklayer 16C covers a portion of a photoelectric conversion film 130 q thatoverlaps the second electrodes 120 in plan view. The photoelectricconversion film 130 q is a multilayer structure composed of theelectron-blocking film 14, the p-type semiconductor film 13 p, themixture film 13 x, and the n-type semiconductor film 13 n. Incidentally,even after the hole-blocking film 16 is patterned, the covering section560 of the mask layer 16C can hold a function as a hole-blocking film.Thus, the whole of a multilayer structure composed of theelectron-blocking film 14, the p-type semiconductor film 13 p, themixture film 13 x, the n-type semiconductor film 13 n, and the coveringsection 560 of the mask layer 16C can be referred to as a photoelectricconversion film.

In the case of forming the mask layer from an organic material, theorganic material, which is used to form the mask layer, exhibits a loweretching rate for an etchant, used in a wet etching step below, ratherthan material for forming the photoelectric conversion film 130 q. Thisenables the photoelectric conversion film 130 q to be preferentiallydissolved by wet etching and therefore enables the covering section 560to be left on the photoelectric conversion film 130 q after wet etching.

In particular, in the case of using a portion of the hole-blocking film16 as the mask layer 16C, the hole-blocking film 16 is formed using theorganic material, which exhibits a low etching rate for the etchant,which is used to wet-etch the photoelectric conversion film 130 q in astep of forming the photoelectric conversion film 130 r, rather than thephotoelectric conversion film 130 q. The hole-blocking film 16, which isan example of the organic layer 134 as described above, may have aphotoelectric conversion function. That is, material making up thehole-blocking film 16 may be an organic photoelectric conversionmaterial. In other words, the organic photoelectric conversion materialcan be used to form the mask layer 16C.

The mask layer may be formed from the transparent conductive materialinstead of the organic material. In the case of using the transparentconductive material as a hard mask material, after the transparentconductive material is deposited on the photoelectric conversion film130 r by sputtering or a coating process, a portion located on theperipheral region 510 is selectively removed from a film of thetransparent conductive material by photolithography and etching. Thetransparent conductive material used to form the mask layer may be thesame as that used to form the counter electrode 140. Similarly to usingthe organic material to form the mask layer, a pattern of thetransparent conductive material may be directly formed on thephotoelectric conversion film 130 r by an ink jet process.Alternatively, a pattern of the transparent conductive material may beformed by a vacuum vapor deposition process using a mask. From theviewpoint of the influence of a resist, a developer, or a remover, thevacuum vapor deposition pressure using the mask is more advantageousthan photolithography.

As shown in FIG. 12, a conductive mask layer 140C including a coveringsection 560 can be formed in such a manner that, for example, a portionother than a portion located on a imaging region 500 is selectivelyremoved from a film of the transparent conductive material by patterningthe transparent conductive material film. As is the case with an exampledescribed with reference to FIG. 11, the covering section 560 of themask layer 140C covers a portion of a photoelectric conversion film 130r that overlaps a plurality of second electrodes 120 in plan view. As isthe case with the example described with reference to FIG. 11, it is notessential that the whole of a portion located on a peripheral region 510is removed from the transparent conductive material film. The mask layer140C may include a portion located on the peripheral region 510 inaddition to the covering section 560.

Alternatively, a mask layer 146C may be formed in such a manner that ahole-blocking film 16 and a film of the transparent conductive materialthat is located on the hole-blocking film 16 are both patterned. Forexample, as shown in FIG. 13, the mask layer 146C may be formed on aphotoelectric conversion film 130 q so as to include an organic layer 16m that is a portion of the hole-blocking film 16 and a transparentconductive layer 140 m that is a portion of the transparent conductivematerial film. A covering section 560 of the mask layer 146C also coversa portion of the photoelectric conversion film 130 q that overlaps aplurality of second electrodes 120 in plan view.

Step of Partially Removing Photoelectric Conversion Film by Wet Etching

Next, the base structure 200 and the mask layer are immersed in anetchant, whereby the photoelectric conversion film is partially removed.For example, a base structure 200A including the mask layer 16C, whichis formed from the hole-blocking film 16 as shown in FIG. 11, isimmersed in an etchant 300. The etching rate of the mask layer 16C withrespect to the etchant 300 is lower than the etching rate of thephotoelectric conversion film 130 q as described above. Therefore, asschematically shown in FIG. 14, the photoelectric conversion structure130A can be formed so as to have a shape corresponding to the coveringsection 560 in such a manner that a portion not covered by the masklayer 16C is selectively removed from the photoelectric conversion film130 q by immersion in the etchant 300. A portion of the covering section560 that remains after the completion of the wet etching step and aportion of the photoelectric conversion film 130 q that remains afterthe completion of the wet etching step correspond to the organic layer134 and the photoelectric conversion layer 132, respectively, shown inFIG. 1. In this example, the portion of the covering section 560 thatremains after the completion of the wet etching step can function as ahole-blocking layer.

If the etching rate of the mask layer 16C is higher than the etchingrate of the photoelectric conversion film 130 q, the etchant 300 usedmay be an arbitrary liquid. The etching rate of each of the mask layer16C and the photoelectric conversion film 130 q can be controlled with aparameter such as the molecular polarity of the etchant 300 or thepresence or absence of an aromatic ring. An example of the etchant 300is acetone or a mixture of acetone and ethanol.

In the case of using a base structure 200B shown in FIG. 12 or a basestructure 200C shown in FIG. 13, the base structure 200B or the basestructure 200C may be immersed in the etchant 300 instead of the basestructure 200A. Immersing, for example, the base structure 200B in theetchant 300 allows a portion not covered by the covering section 560 tobe selectively removed from the photoelectric conversion film 130 r asschematically shown in FIG. 15A, thereby enabling the photoelectricconversion structure 130A, which has the shape corresponding to thecovering section 560, to be formed. In the case of wet etching the basestructure 200C by immersing the base structure 200C in the etchant 300,the etchant 300 used may be a liquid exhibiting a higher etching ratefor the photoelectric conversion film 130 q rather than an organic layer16 m in the mask layer 146C as is the case with an example describedwith reference to FIG. 14.

FIGS. 15B and 15C are enlarged sectional views of a side end portion ofthe photoelectric conversion film 130 q after a step of partiallyremoving the photoelectric conversion film 130 q by wet etching as shownin FIG. 14. Since wet etching is isotropic etching, a portion of thephotoelectric conversion film 130 q that is covered by the mask layer16C is etched with the etchant 300 inside a side surface of the masklayer 16C along a horizontal direction. As a result, as shown in FIGS.15B and 15C, the following form is obtained: a form that the mask layer16C extends outside the side end portion of the photoelectric conversionfilm 130 q along a surface of the mask layer 16C. In a cross-sectionalperpendicular to the principal surface 190 a, a side surface of thephotoelectric conversion film 130 q has a straight tapered form as shownin FIG. 15B or a curved tapered form as shown in FIG. 15C. Incidentally,in the case of performing the step of partially removing thephotoelectric conversion film 130 r by wet etching using the mask layer140C formed from the transparent conductive material as shown in FIG.15A, a side surface of the photoelectric conversion film 130 r has asimilar form.

Step of Forming Light-Transmissive Electrode

Herein, first, a subsequent step in the case of forming thephotoelectric conversion structure 130A by immersing the base structure200A shown in FIG. 11 in the etchant 300 is described. After thephotoelectric conversion structure 130A is obtained from thephotoelectric conversion film 130 q and the covering section 560 of themask layer 16C by wet etching, the counter electrode 140, which servesas a light-transmissive third electrode, is formed so as to cover aportion used as the covering section 560 as shown in FIG. 16A. Thecounter electrode 140 extends to at least the position of the firstelectrode 110 and covers the upper surface 110 a of the first electrode110. Forming the counter electrode 140 allows the hole-blocking film 16and the first electrode 110 to be electrically connected to each otherwith the counter electrode 140 therebetween.

For example, high-frequency magnetron sputtering can be used to form thecounter electrode 140. A transparent electrode material such as ITO isdeposited under, for example, a 1 Pa Ar atmosphere.

In the case of forming the photoelectric conversion structure 130A byimmersing the base structure 200B shown in FIG. 12 or the base structure200C shown in FIG. 13 in the etchant 300, a structure similar to anexample shown in FIG. 16A can be obtained in such a manner that thecounter electrode 140 is formed by depositing the transparent electrodematerial so as to include a portion of the covering section 560, whichis light-transmissive.

FIG. 16B is an enlarged sectional view of a side end portion of thephotoelectric conversion structure 130A shown in FIG. 16A after formingthe counter electrode 140. Since a portion of the photoelectricconversion layer 132 that is covered by the organic layer 134 is etchedinside a side surface of the organic layer 134 along a horizontaldirection in a step of partially removing the photoelectric conversionlayer 132 using the etchant 300, a gap 570 occurs between the counterelectrode 140 and a side surface of the photoelectric conversion layer132.

Typically, after the counter electrode 140 is formed, a protective layer150 is formed so as to cover a structure on the semiconductor substrate190. Forming the protective layer 150 enables the deterioration of thephotoelectric conversion structure 130A due to being directly exposed tooutside air to be suppressed. An example of the protective layer 150 isa monolayer film of aluminium oxide, silicon oxide, silicon nitride, orsilicon oxynitride or a multilayer film containing two or more ofaluminium oxide, silicon oxide, silicon nitride, and silicon oxynitride.A PVD process such as sputtering, a plasma-enhanced CVD process, acatalytic CVD process, an atomic layer deposition (ALD) process, and thelike can be used to form the protective layer 150. Alternatively,high-frequency magnetron sputtering may be used to form the protectivelayer 150. The protective layer 150 may be formed in such a manner thataluminium oxide is deposited under, for example, a 1 Pa atmospherecontaining Ar and O₂ so as to cover the counter electrode 140.

Through the above steps, the photoelectric conversion element 100A isobtained as shown in FIG. 1. An example that the organic materials areused to form the electron-blocking film 14 and the hole-blocking film 16has been described above. An electron-blocking film and/or ahole-blocking film may be formed from an oxide semiconductor asdescribed below. In this case, for example, an oxide semiconductor layeror a combination of the oxide semiconductor layer and a transparentconductive layer 140 m can be used as mask layer.

Step of Preparing Base Structure

A method for manufacturing a photoelectric conversion element accordingto another embodiment of the present disclosure is described below. Asis the case with the above-mentioned example, first, the following basestructure is prepared: a base structure including a semiconductorsubstrate having a principal surface, a plurality of electrodes locatedon or above the principal surface, and a photoelectric conversion filmcovering at least the electrodes. For example, a semiconductor substrate190 is prepared and a plurality of second electrodes 120 and a firstelectrode 110 are formed on the principal surface 190 a side of thesemiconductor substrate 190. Furthermore, an interlayer insulating layer160 is formed. This allows a structure shown in FIG. 7 to be obtained.

Next, a photoelectric conversion film is formed so as to cover at leastthe second electrodes 120. Herein, an electron-blocking layer 14 s isformed on the principal surface 190 a side of the semiconductorsubstrate 190 so as to cover at least the second electrodes 120.Examples of material for forming the electron-blocking layer 14 sinclude calcium oxide, chromium oxide, copper chromium oxide, manganeseoxide, cobalt oxide, nickel oxide, copper oxide, copper gallium oxide,copper strontium oxide, niobium oxide, molybdenum oxide, copper indiumoxide, silver indium oxide, and iridium oxide.

In the case of forming the electron-blocking layer 14 s from at leastone of these oxides, the electron-blocking layer 14 s is not removedusing the above-mentioned etchant 300. Therefore, patterning is carriedout at the stage of depositing or applying the material for forming theelectron-blocking layer 14 s. For example, after the material forforming the electron-blocking layer 14 s is provided by a vacuum vapordeposition process or a coating process, a portion located on aperipheral region 510 is selectively removed from a film of the materialfor forming the electron-blocking layer 14 s by photolithography andetching. Alternatively, a pattern of an oxide semiconductor may beformed by a vacuum vapor deposition process using a mask or a sputteringprocess. This enables the electron-blocking layer 14 s to be formed suchthat the electron-blocking layer 14 s covers a region to be formed intoan imaging region 500 as shown in FIG. 17.

Since forming the electron-blocking layer 14 s from an oxidesemiconductor material allows the electron-blocking layer 14 s to havereduced resistance as compared to forming the electron-blocking layer 14s from an organic material, the electron-blocking layer 14 s has a smallvoltage drop; hence, a higher voltage can be applied to an organicphotoelectric conversion film. Therefore, the photoelectric conversionefficiency can be increased without varying the bias applied between thesecond electrodes 120 and a counter electrode 140. Using the oxidesemiconductor material to form the electron-blocking layer 14 seliminates the possibility of dissolution of the electron-blocking layer14 s in a solution of material for forming an organic film even in thecase where the organic film is formed on the electron-blocking layer 14s by a coating process in a subsequent step. Thus, it is easier to forma multilayer structure functioning as a photoelectric conversionstructure.

Next, a p-type semiconductor film 13 p, a mixture film 13 x, and ann-type semiconductor film 13 n are formed on the principal surface 190 aside. In this operation, as shown in FIG. 18, the p-type semiconductorfilm 13 p, the mixture film 13 x, and the n-type semiconductor film 13 nmay be formed so as to cover not only the electron-blocking layer 14 sbut also the region to be formed into the imaging region 500. Thisallows a base structure 210 including a photoelectric conversion film130 s which includes the electron-blocking layer 14 s, the p-typesemiconductor film 13 p, the mixture film 13 x, and the n-typesemiconductor film 13 n and which is located on the principal surface190 a side to be obtained.

Step of Forming Conductive Mask Layer on Photoelectric Conversion Film

Next, as shown in FIG. 19, a mask layer 16D is formed so as to cover atleast a portion of a multilayer structure including the p-typesemiconductor film 13 p, the mixture film 13 x, and the n-typesemiconductor film 13 n, the portion overlapping the second electrodes120 in plan view. Herein, the mask layer 16D formed is an oxidesemiconductor layer. A portion of the oxide semiconductor layer that islocated on the region to be formed into the imaging region 500 functionsas a covering section 560. A portion of the oxide semiconductor layerthat corresponds to the covering section 560 can function as ahole-blocking layer after the completion of an etching step as describedbelow.

An example of material for forming the mask layer 16D is an oxidesemiconductor such as titanium oxide, tin oxide, indium oxide, tungstenoxide, niobium oxide, or zinc oxide. A process similar to that used toform the electron-blocking layer 14 s can be used to form ahole-blocking layer serving as the mask layer 16D. For example, afterthe oxide semiconductor material is provided on the n-type semiconductorfilm 13 n by a vacuum vapor deposition process or a coating process, aportion located on the peripheral region 510 is selectively removed froma film of the oxide semiconductor material by photolithography andetching. Alternatively, a pattern of the oxide semiconductor may beformed by a vacuum vapor deposition process using a mask or a sputteringprocess. A pattern of the oxide semiconductor may be directly formed byan ink jet process, an offset printing process, a gravure printingprocess, a flexographic printing process, or a screen printing process.This enables the mask layer 16D to be formed such that the mask layer16D includes the covering section 560.

Step of Partially Removing Photoelectric Conversion Film by Wet Etching

Next, the base structure 210 and the mask layer 16D are immersed in theetchant 300, whereby the photoelectric conversion film 130 s ispartially removed. The mask layer 16D is insoluble in the etchant 300.As shown in FIG. 20, a photoelectric conversion structure 130B can beformed so as to have a shape corresponding to the covering section 560in such a manner that a portion not covered by the mask layer 16D isselectively removed from the photoelectric conversion film 130 s byimmersion in the etchant 300. A portion of the covering section 560 thatremains after the completion of a wet etching step and a portion of thephotoelectric conversion film 130 s that remains after the completion ofthe wet etching step correspond to the oxide semiconductor layer 136 andthe photoelectric conversion layer 132, respectively, shown in FIG. 5.In this example, the portion of the covering section 560 that remainsafter the completion of the wet etching step can function as ahole-blocking layer 16 s.

An energy diagram for the photoelectric conversion structure 130B shownin FIG. 20 may be substantially the same as the energy diagram in theexample described with reference to FIG. 10. Herein, since the oxidesemiconductor is used to form the electron-blocking layer 14 s and thehole-blocking layer 16 s, the position of the upper side of a rectanglerepresenting each of the electron-blocking layer 14 s and thehole-blocking layer 16 s may be replaced with the bottom of theconduction band in a corresponding one of the electron-blocking layer 14s and the hole-blocking layer 16 s and the position of the lower sidethereof may be replaced with the top of the valence band in acorresponding one of the electron-blocking layer 14 s and thehole-blocking layer 16 s. Using an oxide semiconductor material to formthe hole-blocking layer 16 s, as well as forming the electron-blockinglayer 14 s from the oxide semiconductor material, allows the resistanceand the voltage drop to be small; hence, the photoelectric conversionefficiency can be increased by applying a higher voltage to an organicphotoelectric conversion film. Step of Forming Light-transmissiveElectrode

Next, as is the case with the example described with reference to FIG.16A, the counter electrode 140, which serves as a light-transmissivethird electrode, is formed so as to cover the covering section 560.Through the above steps, the photoelectric conversion element 1006 shownin FIG. 5 is obtained. A layer of the oxide semiconductor material thatserves as the hole-blocking layer 16 s may be used as an etching masklike this example. Incidentally, as is the case with the exampledescribed with reference to FIG. 13, the photoelectric conversion film130 s may be etched in such a manner that a transparent conductive layer140 m is formed on the covering section 560 of the mask layer 16D andthe mask layer 16D and the transparent conductive layer 140 m are usedas an etching mask.

In the above embodiments, an electron-blocking layer is placed on thesecond electrode 120 side and a hole-blocking layer is placed on thecounter electrode 140 side. In contrast, even in the case where thehole-blocking layer is placed on the second electrode 120 side and theelectron-blocking layer is placed on the counter electrode 140 side, aphotoelectric conversion film can be etched using the electron-blockinglayer or a transparent electrode layer as an etching mask.

According to an embodiments of the present disclosure, a mask layerformed from, for example, at least one of an organic material, atransparent conductive material, and an oxide semiconductor material isused to etch a photoelectric conversion film and therefore a step ofremoving a mask layer after etching can be eliminated. In particular,using an organic photoelectric material to form a mask layer enables aportion of a covering section 560 that remains after etching, thecovering section 560 being a portion of the mask layer, to be used as aportion of a photoelectric conversion structure 130A, for example, acharge-blocking layer. Alternatively, using the transparent conductivematerial to form a mask layer enables a counter electrode 140 includinga portion of a covering section 560 to be formed.

In an embodiment of the present disclosure, a photoelectric conversionfilm 130 r or a photoelectric conversion film 130 q are patterned by wetetching. Wet etching enables the occurrence of a white defect to besuppressed by reducing the dark current as described below withreference to examples. Thus, the effect of increasing the yield isobtained. This is probably because, although there is a difference instress between the interface between the photoelectric conversion film130 r or 130 q and each of second electrodes 120 and the interfacebetween the photoelectric conversion film 130 r or 130 q and a masklayer, the stress is reduced by carrying out wet etching.

In an embodiment of the present disclosure, a photoelectric conversionfilm is selectively patterned by wet-etching a structure, including thephotoelectric conversion film, capable of functioning as a device and anetching mask is used as a conductive structure after wet etching. Thus,a photoelectric conversion element can be obtained in such a state thatthe stress in a photoelectric conversion structure is reduced and theetching mask is left. Incidentally, using wet etching instead of dryetching, which is generally used to etch photoelectric conversion films,enables the deterioration of sensitivity near a surface formed by dryetching to be avoided.

EXAMPLES

White defects occur because relatively large dark currents as comparedto those in the surroundings are generated in a photoelectric conversionstructure. Thus, whether the number of the white defects is large ofsmall can be evaluated depending on the magnitude of the current flowingin the photoelectric conversion structure. Herein, samples simulating aphotoelectric conversion structure for use in photoelectric conversionelements were prepared and the magnitude of the current in each samplewas measured, whereby the effect of suppressing a white defect by anembodiment of the present disclosure was investigated.

Example 1 and Comparative Example 1

A sample of Example 1 and a sample of Comparative Example 1 wereprepared by a procedure below. First, a 0.7 mm thick glass substratehaving a principal surface overlaid with a lower electrode made from anITO film with a thickness of 150 nm was prepared. Next, a mixture filmwas formed on the lower electrode, which corresponded to theabove-mentioned second electrodes 120, by a coating process from amixture solution of (OC₂H₅)₈Sn(OSi(C₆H₁₃)₃)₂Nc represented by astructural formula below and PCBM available from Frontier CarbonCorporation. In the mixture solution, which was used for film formation,the weight ratio of (OC₂H₅)₈Sn(OSi(C₆H₁₃)₃)₂Nc to PCBM was 1:9 and 30mg/ml of chloroform was used. In the structural formula below, Etrepresents C₂H₅ and Hex represents C₆H₁₃. The thickness of the mixturefilm, which was obtained in this operation, was about 250 nm.

Furthermore, C₆₀ was deposited to a thickness of 50 nm on a region ofthe mixture film, which served as a photoelectric conversion layer,through a first shadow mask made of metal by a vacuum vapor depositionprocess. Thereafter, an upper electrode, that is, an ITO film with athickness of about 30 nm was formed on a layer of C₆₀ through a secondshadow mask provided with a small opening by a sputtering process. TheC₆₀ layer played a role as a hole-blocking layer. FIG. 21 schematicallyshows the configuration of a stack obtained in this operation.

The current density induced between the upper electrode and the lowerelectrode was measured under a nitrogen atmosphere using a semiconductordevice parameter analyzer, B1500A, available from Keysight TechnologiesInc. in such a state that a bias of 5 V was applied between the upperelectrode and the lower electrode, whereby a value of 2.3×10⁻⁴ mA/cm²was obtained. The measurement obtained in this operation was defined asthe dark current of the sample of Comparative Example 1.

Next, the above stack was immersed in acetone under a nitrogenatmosphere, whereby the mixture film, which served as a photoelectricconversion layer, was wet etched. After 5 minutes elapsed, the stack wastaken out of acetone, which was used as an etchant, whereby the sampleof Example 1 was obtained.

FIG. 22 schematically shows the configuration of the etched stack. Asschematically shown in FIG. 22, in the sample of Example 1, a portionnot covered by the C₆₀ layer was removed from the mixture film by wetetching. The etching rate of the mixture film in this operation was 50nm/min. Incidentally, C_(H) is insoluble in acetone. The etching rate ofthe C₆₀ layer may be considered as 0 nm/min.

The current density induced between the upper electrode and lowerelectrode of the sample of Example 1 was measured under a nitrogenatmosphere in substantially the same manner as that used in ComparativeExample 1, whereby a value of 7.5×10⁻⁵ mA/cm² was obtained.

Example 2 and Comparative Example 2

First, a stack having a configuration that was substantially the same asthe configuration shown in FIG. 21 was prepared in substantially thesame manner as that used to prepare the sample of Comparative Example 1.Next, the current density induced between an upper electrode and a lowerelectrode was measured under a nitrogen atmosphere in substantially thesame manner as that used in Comparative Example 1, whereby a value of1.0×10⁻⁴ mA/cm² was obtained. The measurement obtained in this operationwas defined as the dark current of a sample of Comparative Example 2.

Next, the stack was immersed in a mixture of acetone and ethanol under anitrogen atmosphere, so that a mixture film serving as a photoelectricconversion layer was wet etched, whereby a stack having a configurationthat was substantially the same as the configuration shown in FIG. 22was prepared. The ratio of acetone to ethanol in the mixture used inthis operation was 3:1 on a volume basis. After this stack was immersedin the mixture for 6 minutes, this stack was taken out of the mixture,which was used as an etchant, whereby a sample of Example 2 wasobtained. The etching rate of the mixture film was 40 nm/min. Thecurrent density induced between the upper electrode and the lowerelectrode was measured under a nitrogen atmosphere in substantially thesame manner as that used in Example 1 and Comparative Examples 1 and 2,whereby a measurement of 1.6×10⁻⁵ mA/cm², which was the magnitude of adark current, was obtained.

Example 3 and Comparative Example 3

A stack having a configuration that was substantially the same as theconfiguration shown in FIG. 21 was prepared in substantially the samemanner as that used to prepare the samples of Comparative Examples 1 and2. Next, the current density induced between an upper electrode and alower electrode was measured under a nitrogen atmosphere insubstantially the same manner as that used in Comparative Examples 1 and2, whereby a measurement of 3.5×10⁻³ mA/cm², which was the magnitude ofa dark current, was obtained. The measurement obtained in this operationwas defined as the dark current of a sample of Comparative Example 3.

A mixture film was selectively wet etched in substantially the samemanner as that used to prepare the sample of Example 2 except that amixture with an acetone-to-ethanol volume ratio of 2:1 was used as anetchant and the immersion time of the stack was 8 minutes, whereby asample of Example 3 was prepared. The etching rate of the mixture filmwas 30 nm/min. The current density induced between the upper electrodeand the lower electrode was measured under a nitrogen atmosphere insubstantially the same manner as that used in each of the aboveexamples, whereby a measurement of 2.5×10⁻⁴ mA/cm², which was themagnitude of a dark current, was obtained.

Example 4 and Comparative Example 4

A stack having a configuration that was substantially the same as theconfiguration shown in FIG. 21 was prepared in substantially the samemanner as that used to prepare the samples of Comparative Examples 1 to3. Next, the current density induced between an upper electrode and alower electrode was measured under a nitrogen atmosphere insubstantially the same manner as that used in Comparative Examples 1, 2,and 3, whereby a measurement of 4.2×10⁻⁵ mA/cm², which was the magnitudeof a dark current, was obtained. The measurement obtained in thisoperation was defined as the dark current of a sample of ComparativeExample 4.

A mixture film was selectively wet etched in substantially the samemanner as that used to prepare the samples of Examples 2 and 3 exceptthat a mixture with an acetone-to-ethanol volume ratio of 1:1 was usedas an etchant and the immersion of the stack was 12.5 minutes, whereby asample of Example 4 was prepared. The etching rate of the mixture filmwas 20 nm/min. The current density induced between the upper electrodeand the lower electrode was measured under a nitrogen atmosphere insubstantially the same manner as that used in the above examples,whereby a measurement of 1.9×10⁻⁵ mA/cm², which was the magnitude of adark current, was obtained.

The table below shows the dark current measured for the sample of eachof Examples 1 to 4 and Comparative Examples 1 to 4.

TABLE Acetone to Dark ethanol Etching Immersion current (volume ratetime [mA/cm²] ratio) [nm/min.] [min.] @5 V Comparative 1:0 50 2.3 × 10⁻⁴Example 1 Example 1 5 7.5 × 10⁻⁵ Comparative 3:1 40 1.0 × 10⁻⁴ Example 2Example2 6 1.6 × 10⁻⁵ Comparative 2:1 30 3.5 × 10⁻³ Example 3 Example3 82.5 × 10⁻⁴ Comparative 1:1 20 4.2 × 10⁻⁵ Example 4 Example 4 12.5 1.9 ×10⁻⁵

From the table, it became clear that, although the dark current measuredfor the samples of Comparative Examples 1 to 4 varied to a certainextent, the value of the dark current was reduced by wet etching everysample with reference to the dark current measured for the samples ofcorresponding examples. That is, it became clear that the value of thedark current was reduced by wet-etching a photoelectric conversion filmand the effect of suppressing a white defect was obtained. It isinferred that the reduction in value of the dark current occurredbecause the stress in a mixture film was reduced by wet etching. Thissuggests the possibility that molecules in a photoelectric conversionfilm are likely to move in such a state that a structure including thephotoelectric conversion film is immersed in an etchant and themolecules are rearranged in a stable state in the course of pulling upthe structure from the etchant and drying the structure. There is apossibility that the etchant partially permeated the photoelectricconversion film.

It can be said that Examples 1 to 4 described above correspond to thecase where a C₆₀ layer that is an organic layer with an etching ratelower than that of a mixture film serving as a photoelectric conversionfilm is used as an etching mask. In the case where an ITO film servingas an upper electrode is used as an etching mask and in the case wherean oxide semiconductor material is used to form a hole-blocking layerinstead of C₆₀, a similar effect can be expected to be obtained.According to an embodiment of the present disclosure, the reduction ofthe stress occurring at the interface between a photoelectric conversionfilm and another member and the partial removal of the photoelectricconversion film by etching can be achieved at the same time.

What is claimed is:
 1. A method for manufacturing a photoelectricconversion element, comprising: providing a base structure including asemiconductor substrate having a principal surface, a first electrodelocated on or above the principal surface, second electrodes which arelocated on or above the principal surface and which are one- ortwo-dimensionally arranged, and a photoelectric conversion film coveringat least the second electrodes; forming a mask layer on thephotoelectric conversion film, the mask layer being conductive andincluding a covering section covering a portion of the photoelectricconversion film that overlaps the second electrodes in plan view; andpartially removing the photoelectric conversion film by immersing thebase structure and the mask layer in an etchant.
 2. The method formanufacturing the photoelectric conversion element according to claim 1,wherein the mask layer is made of an organic material, and an etchingrate of the mask layer during partially removing the photoelectricconversion film is lower than an etching rate of the photoelectricconversion film during partially removing the photoelectric conversionfilm.
 3. The method for manufacturing the photoelectric conversionelement according to claim 2, wherein the organic material is aphotoelectric conversion material.
 4. The method for manufacturing thephotoelectric conversion element according to claim 1, wherein the masklayer is made of an oxide semiconductor material.
 5. The method formanufacturing the photoelectric conversion element according to claim 2,further comprising forming a light-transmissive third electrode whichcovers the covering section and which electrically connects the coveringsection to the first electrode after partially removing thephotoelectric conversion film.
 6. The method for manufacturing thephotoelectric conversion element according to claim 1, wherein the masklayer is made of a transparent conductive material.
 7. The method formanufacturing the photoelectric conversion element according to claim 6,further comprising forming a third electrode electrically connecting thecovering section to the first electrode after partially removing thephotoelectric conversion film.
 8. The method for manufacturing thephotoelectric conversion element according to claim 1, wherein the basestructure includes a readout circuit electrically connected to thesecond electrodes.
 9. The method for manufacturing the photoelectricconversion element according to claim 1, wherein providing the basestructure includes forming the second electrodes on or above theprincipal surface and forming the photoelectric conversion film on orabove the principal surface after forming the second electrodes.
 10. Aphotoelectric conversion element comprising: a semiconductor substratehaving a principal surface; a first electrode located on or above theprincipal surface; second electrodes which are located on or above theprincipal surface and which are one- or two-dimensionally arranged; aphotoelectric conversion film covering at least the second electrodes;and a conductive layer covering a portion of the photoelectricconversion film, the portion overlapping the second electrodes in planview, wherein in a cross section perpendicular to the principal surface,the conductive layer extends outside a side end portion of thephotoelectric conversion film.
 11. The photoelectric conversion elementaccording to claim 10, wherein in the cross section, the photoelectricconversion film has a tapered side surface.
 12. The photoelectricconversion element according to claim 10, wherein the conductive layeris made of an organic material.
 13. The photoelectric conversion elementaccording to claim 12, wherein the organic material is a photoelectricconversion material.
 14. The photoelectric conversion element accordingto claim 10, wherein the conductive layer is made of an oxidesemiconductor material.
 15. The photoelectric conversion elementaccording to claim 12, further comprising a light-transmissive thirdelectrode which covers the covering section and which electricallyconnects the covering section to the first electrode.
 16. Thephotoelectric conversion element according to claim 10, wherein theconductive layer is made of a transparent conductive material.
 17. Thephotoelectric conversion element according to claim 16, furthercomprising a third electrode electrically connecting the coveringsection to the first electrode.
 18. The photoelectric conversion elementaccording to claim 10, wherein the semiconductor substrate includes atleast a part of a readout circuit electrically connected to the secondelectrodes.